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The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO2) doped with dysprosium (Dy) and a method of fabricating such a combination ...
Thin film atomic layer deposition equipment for semiconductor processing. ... Atomic layer deposition ... for hafnium–aluminate and zirconium–aluminate ...
364 rows· Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. .
Atomic layer deposited barium strontium titanium oxide films ... both atomic layer deposited barium strontium titanium ... "Atomic Layer Deposition of Zirconium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
Systems and methods for insitu post atomic layer deposition ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:
A plurality of cycles of a first atomic layer deposition ... In situ deposition of different metalcontaining films using ... the deposition of zirconium and hafnium ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate ...
... a zirconium and/or hafniumcontaining layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... "Atomic layer deposition" ...
Methods according to some embodiments can be used to form siliconrich hafnium silicate and zirconium ... metal silicate films ... atomic layer deposition of hafnium ...
A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric ...
The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.
PlasmaAssisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis ... Genus Inc. website, ... zirconium oxide, ...
In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor.
Home > Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus. Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus
FIG. 1 depicts all atomic layer deposition system for ... including an insulating layer having a hafnium ... Deposition of hafnium oxide and/or zirconium oxide and ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
... layers provide an insulating layer in a variety of ... to deposit hafnium by atomic layer deposition. ... zirconium oxide atomic layer deposited ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
A dielectric film containing HfO 2 /ZrO 2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent ...
Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.
A gate dielectric is formed by atomic layer deposition of ... forming a layer of zirconium oxide on the layer of hafnium ... Method for forming a gate insulating ...
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